Aluminum oxide (alox) interfacial layer plays an important role in alile [5]. Acting as a permeable membrane, this layer controls the flux of si atoms into the al film, determining the kinetics of aic. The large-grained, highly (111)-oriented ge layer formed by alile worked well as an epitaxial seed layer for a high-quality ge layer.

This paper is devoted to a computer simulation study of the kinetics of the alile process taking into account the mechanisms of its separate stages: Si diffusion in the alox membrane, nucleation Alile was conducted by thermal annealing at 450Β°c for 16h in vacuum. In the alile process, the a-sige and al layers are exchanged and the a-sige is simultaneously crystallized.

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